SnO2 thin films for gas sensors modified by hexamethyldisilazane after rapid thermal annealing

Sensors and Actuators, B: Chemical

Volumn 100, Issue 3, 2004, Pages 352-358

  Popova, L ^a   Djulgerova, R ^a   Beshkov, G ^a   Mihailov, V ^a   Szytula, A ^b   Gondek, L ^b   Petrovic, Z J ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b JAGIELLONIAN UNIVERSITY   (Poland)

^c UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

Hexamethyldisilazane; Hollow cathode discharge; RTA; SnO2

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBON; CHEMICAL MODIFICATION; COATINGS; DIFFUSION; DOPING (ADDITIVES); NITROGEN; RAPID THERMAL ANNEALING; SILICON; SOLUTIONS; THIN FILMS; TIN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

DOPANT ELEMENTS; HEXAMETHYLDISILAZANE; HOLLOW CATHODE DISCHARGE; SNO2;

CHEMICAL SENSORS;

EID: 2342618792     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2004.02.004     Document Type: Article

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