Hydrogen sensing properties of SnO2 varistors loaded with SiO2 by surface chemical modification with diethoxydimethylsilane

Sensors and Actuators, B: Chemical

Volumn 64, Issue 1-3, 2000, Pages 175-181

  Hyodo, Takeo ^a   Baba, Yasuomi ^b   Wada, Kenji ^b   Shimizu, Yasuhiro ^a   Egashira, Makoto ^a  

^a NAGASAKI UNIVERSITY   (Japan)

^b SASEBO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Breakdown voltage; Diethoxydimethylsilane; Potential barrier height; SnO2 varistor; Surface chemical modification

Indexed keywords

EID: 0000256396     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00503-1     Document Type: Article

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