MBE growth and characterization of HgTe based quantum wells and superlattices

Journal of Alloys and Compounds

Volumn 371, Issue 1-2, 2004, Pages 6-9

  Becker, C R ^a   Zhang, X C ^a   Ortner, K ^a   Pfeuffer Jeschke, A ^a   Latussek, V ^a   Daumer, V ^a   Landwehr, G ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Crystal growth; Electronic transport; Light absorption; Quantum wells; X ray diffraction

Indexed keywords

CRYSTAL GROWTH; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; LIGHT ABSORPTION; MERCURY AMALGAMS; MODULATION; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION;

BULK INVERSION ASYMMETRY (BIA); CONFINEMENT POTENTIAL; ELECTRONIC TRANSPORT; SPIN ORBITS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2342616747     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2003.04.002     Document Type: Conference Paper

References (18)

1. Rajaval R.D., Jamba D.M., Jensen J.E., Wilson J.A., Johnson J.L., Patten E.A., Kosai K., Goetz P., Johnson S.M., J. Cryst. Growth. 184-185:1998;1272.
2. Datta S., Das B., Appl. Phys. Lett. 56:1990;665.
3. Dresselhaus G., Phys. Rev. 100:1955;580.
4. C. Kittel, Quantum Theory of Solids, Wiley, New York, 1963.
5. Rashba E.I., Fiz. Tverd. Tela. 2:1960;1224 Rashba E.I., Sov. Phys. Solid State. 2:1960;1109.
6. Rashba E.I., Fiz. Tverd. Tela. 2:1960;1224 Rashba E.I., Sov. Phys. Solid State. 2:1960;1109.
7. Bychkov Y.A., Rashba E.I., J. Phys. C. 17:1984;6039.
8. P. Pfeffer, W. Zawadzki, Phys. Rev. B 59 (1999) R5312.
9. U. Rössler, F. Malcher, G. Lommer, in: G. Landwehr (Ed.), Springer Series in Solid-State Sciences, vol. 87, Springer-Verlag, Berlin, 1989, p. 376.
10. M.H. Weiler, in: R. Willardson, A.C. Beer (Eds.), Semiconductors and Semimetals, vol. 16, Academic Press, New York, 1981, p. 119.
11. Zhang X.C., Pfeuffer-Jeschke A., Ortner K., Hock V., Buhmann H., Becker C.R., Landwehr G., Phys. Rev. B. 63:2001;245305.
12. Becker C.R., Latussek V., Pfeuffer-Jeschke A., Landwehr G., Molenkamp L.W., Phys. Rev. B. 62:2000;10353 Becker C.R., Latussek V., Landwehr G., Molenkamp L.W., Phys. Rev. B. 68:2003;035202.
13. Becker C.R., Latussek V., Pfeuffer-Jeschke A., Landwehr G., Molenkamp L.W., Phys. Rev. B. 62:2000;10353 Becker C.R., Latussek V., Landwehr G., Molenkamp L.W., Phys. Rev. B. 68:2003;035202.
14. Goschenhofer F., Gerschütz J., Pfeuffer-Jeschke A., Hellmig R., Becker C.R., Landwehr G., J. Electron. Mater. 27:1998;532.
15. Ortner K., Zhang X.C., Oehling S., Gerschütz J., Pfeuffer-Jeschke A., Hock V., Becket C.R., Landwehr G., Molenkamp L.W., Appl. Phys. Lett. 79:2001;3980.
16. K. Ortner, X.C. Zhang, A. Pfeuffer-Jeschke, C.R. Becker, G. Landwehr, L.W. Molenkamp, Phys. Rev. B 66 (2002) 075322.
17. A. Pfeuffer-Jeschke, Doctoral thesis, Physikalisches Institut der Universität Würzburg, 2000. 2 vul. Kotziubinskoho, 58012
18. Winkler R., Phys. Rev. B. 62:2000;4245.