Growth and characterization of p-type HgTe/Hg1-xCdxTe single quantum wells using nitrogen and arsenic

Applied Physics Letters

Volumn 79, Issue 24, 2001, Pages 3980-3982

  Ortner, K ^a   Zhang, X C ^a   Oehling, S ^a   Gerschutz J ^a   Pfeuffer Jeschke, A ^a   Hock, V ^a   Becker, C R ^a   Landwehr, G ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035842755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425465     Document Type: Review

References (12)

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