Investigation of iodine as a donor in MBE grown Hg1-xCdxTe

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 532-535

  Goschenhofer, F ^a   Gerschutz J ^a   Pfeuffer Jeschke, A ^a   Hellmig, R ^a   Becker, C R ^a   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

HgCdTe; Molecular beam epitaxy; N type doping

Indexed keywords

EID: 0002807647     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0010-x     Document Type: Article

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