Oxygen lone-pair states near the valence band edge of aluminum oxide thin films

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4147-4150

  Zhao, Z W ^a   Tay, B K ^a   Sun, Chang Q ^a   Ligatchev, V ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DENSITY-OF-STATES (DOS); LONE-PAIR STATES; MIDGAP STATES;

ABSORPTION SPECTROSCOPY; ALUMINA; ANNEALING; CAPACITANCE MEASUREMENT; CHEMICAL BONDS; COMPUTER SOFTWARE; DATA RECORDING; ENERGY GAP; FERMI LEVEL; FILM GROWTH; LIGHT ABSORPTION; PHOTONS; THERMAL EFFECTS; THIN FILMS; VACUUM;

ELECTRONIC DENSITY OF STATES;

EID: 2342590175     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1686905     Document Type: Article

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