Axisymmetric and 3D calculations of melt flow during VCz growth

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 60-66

  Bansch E ^a   Davis, D ^a   Langmach, H ^a   Miller, W ^a,b   Rehse, U ^b   Reinhardt, G ^a   Uhle, M ^a  

^a WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Computer simulation; A1. Convection; A1. Heat transfer; A2. Liquid encapsulated Czochralski method

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; HEAT CONVECTION; HEAT TRANSFER; INTERFACES (MATERIALS); REYNOLDS NUMBER; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS;

AXISYMMETRIC CALCULATIONS; CONVECTION; LIQUID ENCAPSULATED CZOCHRALSKI METHOD; MELT FLOW;

CRYSTAL GROWTH FROM MELT;

EID: 2342587500     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.030     Document Type: Conference Paper

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