A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface

Journal of Crystal Growth

Volumn 230, Issue 1-2, 2001, Pages 143-147

  Rehse, U ^a   Miller, W ^a   Frank, Ch ^a   Rudolph, P ^a   Neubert, M ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Computer simulation; A1. Convection; A2. Czochralski method; B1. Gallium compounds; B2. Semiconducting gallium arsenide

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL GROWTH FROM MELT; HEAT CONVECTION; INTERFACES (MATERIALS); SEMICONDUCTOR GROWTH; VAPOR PRESSURE;

VAPOR PRESSURE CONTROLLED CZOCHRALSKI (VCZ) GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035426383     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01325-2     Document Type: Conference Paper

References (6)

1. Temperature field simulation and correlation to the structural quality of semi-insulating GaAs crystals grown by the vapour pressure controlled Czochralski method(VCz)
2. Numerical simulation of combined flow in Czochralski crystal growth
3. Development of a new powerful computer code CrysVUN++ especially designed for fast simulation of bulk crystal growth processes
4. Convection and interface shape during Czochralski crystal growth: A numerical study
5. Modeling melt convection in phase-field simulations of solidification
6. Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convection