3D numerical simulation and experimental investigations of melt flow in an Si Czochralski melt under the influence of a cusp-magnetic field

Journal of Crystal Growth

Volumn 236, Issue 4, 2002, Pages 545-550

  Vizman, D ^a   Grabner O ^b   Muller G ^b,c  

^a WEST UNIVERSITY OF TIMISOARA   (Romania)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A1. Computer simulation; A1. Convection; A1. Magnetic fields; A2. Magnetic field assisted Czochralski method; B2. Semiconducting silicon

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; MAGNETIC FIELDS; NUMERICAL ANALYSIS; SEMICONDUCTING SILICON;

MELT FLOW;

CRYSTAL GROWTH FROM MELT;

EID: 0036494412     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00833-3     Document Type: Article

References (12)