Atomic layer diffusion and electronic structure at In 0.53Ga 0.47As/InP interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 554-559

  Smith, P E ^a   Goss, S H ^b   Bradley, S T ^b   Hudait, M K ^b   Lin, Y ^b   Ringel, S A ^b   Brillson, L J ^a  

^a OHIO STATE UNIVERSITY   (United States)

^b Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DIFFUSION; CHAMBER MEMORY EFFECTS; CHEMICAL EFFECTS; THERMOPHOTOVOLTAICS;

ACTIVATION ENERGY; ANNEALING; CATHODOLUMINESCENCE; DIFFUSION; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PRESSURE EFFECTS; VAPORS;

INDIUM COMPOUNDS;

EID: 2342582768     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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