Polarization-sensitive photocurrents of metal-semiconductor structures with flat and microrelief interfaces

Microelectronics Journal

Volumn 27, Issue 1, 1996, Pages 37-42

  Dmitruk, N L ^a   Borkovskaya, O Yu ^a   Mayeva, O I ^a   Fursenko, O V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT POLARIZATION; LIGHT TRANSMISSION; METALS; MULTILAYERS; PHOTODETECTORS; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SHORT CIRCUIT CURRENTS;

FLAT AND MICRORELIEF INTERFACES; METAL LAYER THICKNESS; MICROPROFILING; PHOTOCURRENT; SURFACE BARRIER STRUCTURE; SURFACE POLARITON; TRANSMISSION COEFFICIENTS; WAVELENGTHS;

PHOTOSENSITIVITY;

EID: 0030083183     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00027-5     Document Type: Article

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