Texture and electromigration performance in damascene interconnects formed by reflow sputtered Cu film

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 721-728

  Abe, Kazuhide ^a   Harada, Yusuke ^b   Yoshimaru, Masaki ^a   Onoda, Hiroshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

^b Miyagi Oki Electric Company Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL BONDS; COPPER; CRYSTAL ORIENTATION; CURRENT DENSITY; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; LSI CIRCUITS; METALLIC FILMS; NITRIDING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; REACTIVE ION ETCHING; SPUTTERING; TEXTURES; X RAY DIFFRACTION ANALYSIS;

DAMASCENE INTERCONNECTS; RAPID THERMAL NITRIDING; REFLOW SPUTTERING; STANDARD DEVIATION;

ELECTROMIGRATION;

EID: 2342544122     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1676618     Document Type: Article

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