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Volumn 39, Issue 11, 1999, Pages 1697-1706

Electromigration performance of Al-Si-Cu filled vias with titanium glue layer

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ELECTRIC CONTACTS; ELECTROMIGRATION; GLUES; TITANIUM;

EID: 0033221739     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00175-4     Document Type: Article
Times cited : (4)

References (13)
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    • Hu, C.K.1    Rodbell, K.P.2    Sullivan, T.D.3    Lee, K.Y.4    Bouldin, D.P.5
  • 2
    • 0019487986 scopus 로고
    • Effect of texture and grain structure on electromigration in Al-0.5%Cu thin films
    • Vaidya S., Sinha A.K. Effect of texture and grain structure on electromigration in Al-0.5%Cu thin films. Thin Solid Films. 75:1981;253.
    • (1981) Thin Solid Films , vol.75 , pp. 253
    • Vaidya, S.1    Sinha, A.K.2
  • 3
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    • Improvement of electromigration resistance of layered aluminium conductors
    • Hinode K., Homma Y. Improvement of electromigration resistance of layered aluminium conductors. Proc. IRPS :1990;25.
    • (1990) Proc. IRPS , pp. 25
    • Hinode, K.1    Homma, Y.2
  • 4
    • 0026142234 scopus 로고
    • Formation of texture controlled aluminium and its migration performance in Al-Si/TiN stacked structure
    • Kageyama M., Hashimoto K., Onoda H. Formation of texture controlled aluminium and its migration performance in Al-Si/TiN stacked structure. Proc. 29th Int. Reliability Physics Symp :1991;97.
    • (1991) Proc. 29th Int. Reliability Physics Symp , pp. 97
    • Kageyama, M.1    Hashimoto, K.2    Onoda, H.3
  • 5
    • 0342932170 scopus 로고
    • Permitted electromigration of tungsten-plug vias in chain for test structure with short inter-plug distance
    • Aoki T., Kawano Y., Nogami T. Permitted electromigration of tungsten-plug vias in chain for test structure with short inter-plug distance. Proc. VMIC conference :1994;266.
    • (1994) Proc. VMIC Conference , pp. 266
    • Aoki, T.1    Kawano, Y.2    Nogami, T.3
  • 6
    • 0016940795 scopus 로고
    • Electromigration in thin aluminum films on titanium nitride
    • Blech I.A. Electromigration in thin aluminum films on titanium nitride. J. Appl. Phys. 47:(4):1976;1203.
    • (1976) J. Appl. Phys , vol.47 , Issue.4 , pp. 1203
    • Blech, I.A.1
  • 7
    • 0017459611 scopus 로고
    • Copper electromigration in aluminum
    • Blech I.A. Copper electromigration in aluminum. J. Apll. Phys. 48:(2):1977;473.
    • (1977) J. Apll. Phys , vol.48 , Issue.2 , pp. 473
    • Blech, I.A.1
  • 8
    • 36449002166 scopus 로고
    • Electromigration in Al(Cu) two-level structures, Part I: Effect of Cu and kinetics of damage formation
    • Hu C.K., Small M.B., Ho P.S. Electromigration in Al(Cu) two-level structures, Part I: Effect of Cu and kinetics of damage formation. J. Appl. Phys. 74:(2):1993;969.
    • (1993) J. Appl. Phys , vol.74 , Issue.2 , pp. 969
    • Hu, C.K.1    Small, M.B.2    Ho, P.S.3
  • 9
    • 0001806837 scopus 로고
    • Characteristics of aluminum-titanium electrical contacts on silicon
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    • Bower, R.W.1
  • 10
    • 0000146468 scopus 로고
    • Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits
    • Suni I., Blomberg M., Saarilahti J. Performance of titanium nitride diffusion barriers in aluminum-titanium metallization schemes for integrated circuits. J. Vac. Sci. Technol. A3:(6):1985;2233.
    • (1985) J. Vac. Sci. Technol , vol.3 , Issue.6 , pp. 2233
    • Suni, I.1    Blomberg, M.2    Saarilahti, J.3
  • 11
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    • Diffusivity of Al in Ti and the effect of Si doping for very large scale integrated circuit interconnect metallization
    • Nahar R.K., Devashrayee N.M., Khokle W.S. Diffusivity of Al in Ti and the effect of Si doping for very large scale integrated circuit interconnect metallization. J. Vac. Sci. Technol. B6:(3):1998;880.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.