Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures: influence of Si-segregation on the two-dimensional electron gas

Journal of Crystal Growth

Volumn 111, Issue 1-4, 1991, Pages 295-299

  Kohler K ^a   Ganser, P ^a   Maier, M ^a   Bachem, K H ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; MOLECULAR BEAM EPITAXY; SILICON AND ALLOYS; TRANSISTORS, HIGH ELECTRON MOBILITY - HETEROJUNCTIONS;

2D ELECTRON GASES; MODULATION DOPING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026413381     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90988-H     Document Type: Article

References (20)

1. Proc. 13th Intern. Symp. on GaAs and Related Compounds
2. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
3. High-mobility inverted selectively doped heterojunctions
4. Doping effects in AlGaAs
5. Growth of microstructures by molecular beam epitaxy
6. Growth temperature dependence in molecular beam epitaxy of gallium arsenide