Pseudomorphic inverted hemt suitable to low supplied voltage application

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 12, 1992, Pages 2381-2386

  Kasashima, Masaaki ^a   Arai, Yukari ^a   Fujishiro, Hiroki Inomata ^a   Nakamua, Hiroshi ^a   Nishi, Seiji ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000969277     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.179905     Document Type: Article

References (9)

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7. H. I. Fujishiro, H. Tsuji, and S. Nishi, “0.2, 2m gate pseudomorphic InGaAs/AlGaAs inverted HEMTs,” Inst. Phys. Conf Ser. No. 112: Int. Symp. GaAs and Related Compounds, 1990, pp. 453–458.
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