High-resolution X-ray photoelectron spectroscopy of Al x Ga 1-x Sb

Applied Surface Science

Volumn 229, Issue 1-4, 2004, Pages 263-267

  Ramelan, A H ^a,b   Butcher, K S A ^a   Goldys, E M ^a   Tansley, T L ^a  

^a MACQUARIE UNIVERSITY   (Australia)

^b SEBELAS MARET UNIVERSITY   (Indonesia)

Author keywords

Aluminium gallium antimonide; Secondary ion mass spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

ALUMINA; CONTAMINATION; ELECTRONIC PROPERTIES; ETCHING; OHMIC CONTACTS; OPTICAL PROPERTIES; OXIDATION; PASSIVATION; SCHOTTKY BARRIER DIODES; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINIUM GALLIUM ANTIMONIDE; BULK MATERIAL CARBON; OXYGEN CONTAMINATION; SECONDARY ION MASS SPECTROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2342509637     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.02.001     Document Type: Article

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