Surface and interface analysis of GaSb/GaAs semiconductor materials

Applied Surface Science

Volumn 99, Issue 1, 1996, Pages 59-66

  Li, K ^a   Lin, J ^a   Wee, A T S ^a   Tan, K L ^a   Feng, Z C ^b   Webb, J B ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; DIFFUSION; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERDIFFUSION; INTERFACE ANALYSIS; LATTICE MISMATCH; SURFACE ANALYSIS;

SURFACE STRUCTURE;

EID: 0030143383     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00515-3     Document Type: Article

References (19)

1. P. Barman and S. Basu, Appl. Surf. Sci. 55 (1992) 173.
2. M. Gauneau, R. Chaplain, A. Rupert, Y. Toudic and R. Callec, J. Appl. Phys. 73 (1993) 2051.
3. J.A. Dean, Lange's Handbook of Chemistry, 13rd ed. (McGraw-Hill, New York, 1985).
4. A.G. Milnes and A.Y. Polyakov, Solid-State Electron. 36 (1993) 803.
5. S.A. Chalmers, H. Kroemer and A.C. Gossard, J. Cryst. Growth 111 (1991) 647.
6. G. Bougnot, F. Delannoy, F. Pascal, P. Grosse, A. Giani, J. Kaoukab and J. Bougnot, J. Cryst. Growth 107 (1991) 502.
7. R.M. Graham, A.C. Jones, N.J. Mason, S. Rushworth, L. Smith and P.J. Walker, J. Cryst. Growth 145 (1994) 363.
8. R.M. Graham, A.C. Jones, N.J. Mason, S. Rushworth, S. Salesse, T.Y. Seong, G. Booker, L. Smith and P.J. Walker, Semiconductor Sci. Technol. 8 (1993) 1797.
9. F.S. Juang, Y.K. Su and N.Y. Li, Jpn. J. Appl. Phys. 30 (1991) 207.
10. J.T. Zborowski, W.C. Fan, T.D. Golding, A. Vigliante, P.C. Chow, H.D. Shih and J.M. Anthony, J. Appl. Phys. 71 (1992) 5908.
11. A. Giani, J. Podlecki, F. Pascal-Delannoy, G. Bougnot, L. Gouskov and C. Catinaud, J. Cryst. Growth 148 (1995) 25.
12. F. Pascal, F. Delannoy, J. Bougnot, L. Gouskov, G. Bougnot, P. Grosse and J. Kaoukab, J. Electron. Mater. 19 (1990) 187.
13. Y.K. Su and S.M. Chen, J. Appl. Phys. 73 (1993) 8349.
14. A. Mezerreg and C. Llinares, Phys. Status Solidi (b) 170 (1992) 129.
15. F. Maeda, Y. Watanabe and M. Oshima, Appl. Surf. Sci. 82/83 (1994) 276.
16. J.F. Moulder, W.F. Stickle, P.E. Sobol and K.D. Bomben, in: A Handbook of X-ray Photoelectron Spectroscopy, Ed. J. Chastain (Perkin-Elmer Corporation, Physical Electronics Division, Eden Prairie, 1992).
17. K. Li, A.T.S. Wee, J. Lin, K.K. Lee, F. Watt, K.L. Tan, Z.C. Feng and J.B. Webb, Proc. 6th Int. ECASIA Conf., Montreux, Switzerland, October 1995.
18. F.H. Wohlbier, Diffusion and Defect Data, Vol. 47 (Trans Tech Publications, Switzerland, 1986) p. 124.
19. L.L. Chang and A. Koma, Appl. Phys. Lett. 29 (1976) 138.