Optimizing GaSb(111) and GaSb(001) surfaces for epitaxial film growth

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 500-503

  Solomon, J S ^a   Petry, L ^a   Tomich, D H ^b  

^a UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Epitaxial film growth; GaSb(001); GaSb(111)

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DESORPTION; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM COMPOUNDS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRAVIOLET-OZONE OXIDATION;

THIN FILMS;

EID: 0032652319     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01704-0     Document Type: Article

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