Relationship between damage evolution and Si-H complexes formation in hydrogen implanted Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 662-665

  Lee, J K ^a   Hochbauer T ^a   Averitt, R D ^a   Nastasi, M ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); HYDROGEN; INFRARED SPECTROSCOPY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES;

CHANNELING MODE; LATTICE DAMAGE; PRE-IMPLANTED BORON; VACANCY PAIRS;

NUCLEAR INSTRUMENTATION;

EID: 2342481736     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.138     Document Type: Conference Paper

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