Magnetic anisotropy control of SrRuO3 films by tunable epitaxial strain

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2590-2592

  Jung, C U ^a   Yamada, Hiroyuki ^b   Kawasaki, M ^b,c   Tokura, Y ^a,b,d  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; COMPRESSIVE STRENGTH; FILM GROWTH; HETEROJUNCTIONS; MAGNETIC ANISOTROPY; MAGNETIC HYSTERESIS; MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTING FILMS; SINGLE CRYSTALS; STRAIN; STRONTIUM COMPOUNDS; TENSILE STRENGTH; THICKNESS MEASUREMENT; X RAY ANALYSIS;

MAGNETIC EASY AXIS; SPIN POLARIZATION; TUNABLE EPITAXIAL STRAIN; TUNNEL-MAGNETORESISTANCE (TMR);

FERROMAGNETIC MATERIALS;

EID: 2342481717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695195     Document Type: Article

References (14)

1. G. Cao, S. McCall, M. Shepard, J. E. Crow, and R. P. Guertin, Phys. Rev. B 56, 321 (1997).
2. I. I. Mazin and D. J. Singh, Phys. Rev. B 56, 2556 (1997).
3. O. Auciello, C. M. Foster, and R. Ramesh, Annu. Rev. Mater. Sci. 28, 501 (1998).
4. D. C. Worledge and T. H. Geballe, Phys. Rev. Lett. 85, 5182 (2000).
5. K. S. Takahashi, A. Sawa, Y. Ishii, H. Akoh, M. Kawasaki, and Y. Tokura, Phys. Rev. B 67, 094413 (2003).
6. J. S. Dodge, E. Kulatov, L. Klein, C. H. Ahn, J. W. Reiner, L. Miéville, T. H. Geballe, M. R. Beasley, A. Kapitulnik, H. Ohta, Yu. Uspenskii, and S. Halilov, Phys. Rev. B 60, 6987 (1999).
7. Z. Fang, N. Nagaosa, K. S. Takahashi, A. Asamitsu, R. Mathieu, T. Ogasawara, H. Yamada, M. Kawasaki, Y. Tokura, and K. Terakura, Science 302, 92 (2003).
8. Q. Gan, R. A. Rao, C. B. Eom, J. L. Garrett, and Mark Lee, Appl. Phys. Lett. 72, 978 (1998).
9. H. Yamada, M. Kawasaki, Y. Ogawa, and Y. Tokura, Appl. Phys. Lett. 81, 4793 (2002).
10. Y. Ogawa, H. Yamada, T. Ogasawara, T. Arima, H. Okamoto, M. Kawasaki, and Y. Tokura, Phys. Rev. Lett. 90, 217403 (2003).
11. Y. Ogimoto, M. Izumi, A. Sawa, T. Manako, H. Sato, H. Akoh, M. Kawasaki, and Y. Tokura, Jpn. J. Appl. Phys., Part 1 42, 369 (2003).
12. K. Shibuya, T. Ohnishi, M. Lippmaa, M. Kawasaki, and H. Koinuma, Appl. Phys. Lett. 84, 2142 (2004). Lattice constants of CHO are a =5.719 (4.0447×√2) Å, b=5.578 (3.944×√2) Å, and c=7.982 (3.991×√2) Å and those for SRO are a=5.567 (3.936×√2) Å, 6=5.5304 (3.9106×√2) Å, and c=7.8446 (3.9223×√2) Å.
13. When CHO shows relaxed growth along the STO[001] direction, growth of SRO on top of this relaxed layer exerted an opposite strain on CHO due to the similar layer thickness.
14. Six possible variations in the growth orientation of SRO film on STO(110) substrate can be easily obtained from the rotation of six domains in SRO/STO(001) by 45° in the literature. J. C. Jiang, W. Tian, X. Q. Pan, Q. Gan, and C. B. Eom, Appl. Phys. Lett. 72, 2963 (1998).