Tunneling magnetoresistance above room temperature in La0.7Sr0.3MnO3/SrTiO3/ La0.7Sr0.3MnO3 junctions

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 4 A, 2003, Pages

  Ogimoto, Yasushi ^a   Izumi, Makoto ^a,f   Sawa, Akihito ^b   Manako, Takashi ^c   Sato, Hiroshi ^b   Akoh, Hiroshi ^b   Kawasaki, Masashi ^a,b,d   Tokura, Yoshinori ^a,b,e  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NEC CORPORATION   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

^f UNIVERSITY OF TOKYO   (Japan)

Author keywords

Charge transfer; Half metal; La1 xSrxMnO3; Perovskite superlattice; Spin canting; Spin tunnel junction; Tunneling magnetoresistance

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; CHARGE TRANSFER; FERROMAGNETISM; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; SUPERLATTICES; TUNNEL JUNCTIONS;

HALF-METAL; PEROVSKITE SUPERLATTICE; SPIN CANTING; SPIN TUNNEL JUNCTION; TUNNELING MAGNETORESISTANCE;

MAGNETORESISTANCE;

EID: 0037706946     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l369     Document Type: Letter

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