3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE

Physica Status Solidi C: Conferences

Volumn 1, Issue 2, 2004, Pages 347-350

  Weih, P ^a   Cimalla, V ^a   Stauden, Th ^a   Kosiba, R ^a   Ecke, G ^a   Spiess, L ^a   Romanus, H ^a   Gubisch, M ^a   Bock, W ^b   Freitag, Th ^c   Fricke, P ^c   Ambacher, O ^a   Pezoldt, J ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

^c SGS Institut Fresenius GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BINARY MIXTURES; CARRIER MOBILITY; CRYSTAL ORIENTATION; ENERGY DISPERSIVE SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SYNTHESIS (CHEMICAL); THERMODYNAMICS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BAND-GAP ENGINEERING; ELECTRON DRIFT VELOCITY; EPITAXIAL LAYERS; STRESS REDUCTION;

SILICON;

EID: 2342469465     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303953     Document Type: Conference Paper

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