Optical and structural properties of GaNi1-xPx ternary alloys

Guangxue Xuebao/Acta Optica Sinica

Volumn 24, Issue 1, 2004, Pages 137-139

  Chen, Dunjun ^a   Zhang, Kaixiao ^a   Shen, Bo ^a   Deng, Yongzhen ^a   Pu, Lin ^a   Zhang, Rong ^a   Shi, Yi ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

GaNi1 xPx ternary alloy; Metal organic chemical vapor deposit (MOCVD); Optical material; Photoluminescence; Red shift; X ray diffraction

Indexed keywords

ALLOYS; MECHANICAL PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

RED SHIFT; TERNARY ALLOY;

OPTICAL MATERIALS;

EID: 2342446185     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. Kuroiwa R, Asahi H, Iwata K et al.. Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy. Jpn. J. Appl. Phy. Part 1, 1997, 36(6B): 3810-3813.
2. Jiang Fengyi, Li Shuti, Wang Li. InGaN films growth by metalorganic chemical vapor deposition. Acta Optica Sinica, 2001, 21(12): 1463-1466 (in Chinese)
3. Liu Bin, Qiu Rongsheng, Fang Zujie. Theoretical calculation of gain threshold current density for InGaN quantum well lasers. Chin. J. Lasers, 1998, A25(l): l-6 (in Chinese)
4. x using ion-removed ECR radical cell. J. Cryst. Growth, 1997, 175/176: 150-155.
5. Kuroiwa R, Asahi H, Asami K et al.. Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy. Appl. Phys. Lett., 1998, 73(18): 2630-2632.
6. x layers grown on (0001) GaN substrates by gas source molecular beam epitaxy. J. Appl. Phy., 1999, 85(6): 3192-3197.
7. x (x≤O.015) using ion-removed electron cyclotron resonance radical cell. Jpn. J. Appl. Phy., Part 2, 1996, 35(12B): L1634-L1637.
8. x growth by laser-assisted metalorganic chemical vapor deposition. J. Cryst. Growth, 2001, 229(1-4): 48-52.