InGaN films grown by metallorganic chemical vapor deposition

Guangxue Xuebao/Acta Optica Sinica

Volumn 21, Issue 12, 2001, Pages 1463-1466

  Jiang, Fengyi ^a   Li, Shuti ^a   Wang, Li ^a   Peng, Xuexin ^a   Xiong, Chuanbing ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

InGaN; Metallorganic chemical vapor deposition; Photoluminescence; Rutherford backscattering and ion channeling measurements

Indexed keywords

INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SUBSTRATES;

ION CHANNELING MEASUREMENT; SURFACE YIELDS;

OPTICAL FILMS;

EID: 0035563767     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures
2. Nichia announces laser commercialization
3. 1-xN thin films
4. High-quality InGaN films grown on GaN films
5. 1-xN alloys
6. Photoluminescence of InGaN films grown at high temperature by metallorganic vapor phase epitaxy
7. Growth and characterization of bulk InGaN films and quatum wells
8. 1-xN alloy composition grown by metallorganic vapor phase epitaxy
9. 1-xN films studied by X-ray and photoluminescence