Control of Wettability by Anion Exchange on Si/SiO2 Surfaces

Langmuir

Volumn 20, Issue 8, 2004, Pages 3024-3027

  Chi, Young Shik ^a   Lee, Jae Kyun ^b   Lee, Sang Gi ^b   Choi, Insung S ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT ANGLE; ION EXCHANGE; NEGATIVE IONS; SELF ASSEMBLY; SILICA; SOLUTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT ANGLE GONIOMETRY; WATER CONTACT ANGLES;

SURFACE PHENOMENA;

ANIONS; CONTACT ANGLE; ESCA; ION EXCHANGE; OXIDATION; SILICA; SURFACES; WETTABILITY; X RAY SPECTROSCOPY;

EID: 2342418879     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la036340q     Document Type: Article

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