Impurity incorporation during copper electrodeposition in the curvature-enhanced accelerator coverage regime

Electrochemical and Solid-State Letters

Volumn 8, Issue 7, 2005, Pages

  Zhang, W ^a,b   Brongersma, S H ^a   Conard, T ^a   Wu, W ^b,c   Van Hove, M ^a   Vandervorst, W ^a,b   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODEPOSITION; GRAIN BOUNDARIES; IMPURITIES; PARTICLE ACCELERATORS; PHYSICAL VAPOR DEPOSITION; REDUCTION; SECONDARY ION MASS SPECTROMETRY;

COPPER RESISTIVITY; CURVATURE-ENHANCED ACCELERATOR COVERAGE REGIME (CEAC REGIME); DEPOSITION RATES; MATRIX EFFECTS;

COPPER;

EID: 23244448768     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1922872     Document Type: Article

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