Integrated Schottky mixer diodes with cut off frequencies above 1THz

Conference Proceedings- European Microwave Conference

Volumn 3, Issue , 2004, Pages 1133-1136

  Morschbach, M ^a   Schollhorn C ^a   Oehme, M ^a   Kasper, E ^a   Muller A ^b   Buck, T ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; EPITAXIAL GROWTH; FREQUENCIES; MIXER CIRCUITS; MOLECULAR BEAM EPITAXY; SENSORS;

EPITAXIAL LAYERS; RADAR TECHNOLOGY; SCHOTTKY DIODES; SUBSYSTEMS;

DIODES;

EID: 18844375319     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. S. M. Sze, Physics of Semiconductor Devices, New York, John Wiley & Sons, 1969, p. 302.
2. T. Bück, M. Reimann, M. Ulm, R. Mueller-Fiedler, J. Seidel, E. Kasper, C. Schöllhorn, S. Haak, Monolithic Integration of RF-MEMS and semiconductor devices for the K-Band', SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.4981, 2003, pp.131-8. USA
3. C. Schöllhorn W. Zhao, M. Morschbach and E. Kasper, "Attenuation Mechanisms of Aluminum Millimeter-Wave Coplanar Waveguides on Silicon", IEEE Electron Devices, vol. 50, no.3, March 2003, pp. 740-746, USA
4. C. Schöllhorn, M. Morschbach, S. Haak, J. Seidel and E. Kasper, "Systemintegration von Mikrowellen Schottky-Mischern und MEMS-HF-Schaltern", Frequenz, Vol. 57, pp. 45-50, 2003
5. Sproul A.B, Green M.A., "Intrinsic carrier concentration and minority-carrier mobility of silicon from 77 to 300 K", Journal of Applied Physics, vol. 73, no.3, 1 Feb 1993, pp. 1214-25, USA
6. M. Mc. Coll and M. F. Millea, 'Advantages of Mott barrier mixer diodes' Proc. IEE, 61, pp. 499-504, 1973
7. W. Zhao, 'Silizium Oberwellenmischer für den Mikrowellenbereich', Dissertation, 2001, Unversität Stuttgart
8. M. C. A. M. Koolen, J. A. M. Geelen, M. P. J. G. Versleijen, 'An Improved DE-EMBEDDING Technique for On-Wafer High-frequency Characterization', IEEE Bipolar Circuits and Technology Meeting, vol.1, pp. 188-191, 1991