Effect of interelectrode space on properties of SiH4/H2 deposition discharges operating at different radio frequencies

High Temperature Material Processes

Volumn 4, Issue 4, 2000, Pages 563-568

  Amanatides, E ^a   Mataras, D ^a   Rapakoulias, D E ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

Electrode gap; PECVD; Radio Frequency; Silane; C Si:H

Indexed keywords

EID: 23044528151     PISSN: 10933611     EISSN: None     Source Type: Journal    
DOI: 10.1615/hightempmatproc.v4.i4.100     Document Type: Article

References (8)

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