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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 260-263

A unified microscopic mechanism for donor deactivation in Si

(5) Baierle, R a Caldas, M J b Dabrowski J c Mussig H J c Zavodinsky, V d

a FEDERAL UNIVERSITY OF SANTA MARIA (Brazil)

b UNIVERSITY OF SÃO PAULO (Brazil)

c IHP (Germany)

d INSTITUTE OF AUTOMATION AND CONTROL PROCESSES (Russian Federation)

Author keywords

Dopant deactivation; Dopant segregation; Si SiO2

Indexed keywords

INTERFACES (MATERIALS); SEMICONDUCTOR DOPING;

DOPANT DEACTIVATION;

SEMICONDUCTING SILICON;

EID: 0033340838 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00477-9 Document Type: Article

Times cited : (12)

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