Experimental observation of velocity overshoot in N-channel AlGaAs/InGaAs/GaAs enhancement mode MODFETs

IEEE Electron Device Letters

Volumn 21, Issue 11, 2000, Pages 518-520

  Passlack, Matthias ^a   Abrokwah, Jonathan K ^a   Lucero, Rodolfo ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GALLIUM ALLOYS; GATES (TRANSISTOR); INDIUM ALLOYS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; VELOCITY;

ALUMINUM GALLIUM ARSENIDE; ELECTRON VELOCITY; MODFETS; SEMICONDUCTOR DEVICE MEASUREMENT;

FIELD EFFECT TRANSISTORS;

EID: 0034316718     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.877195     Document Type: Article

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