Comparing high-frequency control devices

Microwaves and RF

Volumn 42, Issue 3, 2003, Pages 53-61

  Kameche, Mohamed ^a   Bekhti, Mohammed ^a  

^a Centre National des Techniques Spatiale Oran   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22944447940     PISSN: 07452993     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (6)

1. J.L. Cazaux, D. Pavlidis, G.I. Ng, and M. Tutt, "A HEMT monolithic double channel attenuator with broadband characteristics and wide dynamic range,"18th European Microwave Conference, September 1988, pp. 999-1004.
2. E. Alekseev, Shawn S.H. Hsu, and D. Pavlidis, "Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range,"the 30th European Microwave Conference.
3. N. Jain and R. Gutmann, "Modeling and Design of GaAs MESFET control devices for Broad-Band Applications,"IEEE Transactions on Microwave Theory & Techniques, Vol. 38, February 1990. pp. 109-117.
4. N.V. Drozdovski, R.H. Caverty, and M.J. Quinn, "Large-Signal Modeling of Microwave Gallium Nitride-Based HFETs."2001 AP MC, Taipei. Taiwan, December 3-6, 2001, Proceedings of APMC'01, Vol. .1, pp. 248-251.
5. R.H. Caverty, N.V. Drozdovski, and MJ. Quinn, "Gallium Nitride-Based Microwave and RF Control Devices."Microwave Journal, Vol. 44, NO. 2, February 2001. pp. 112-124.
6. S.H.Wemple,w.c. Niehaus, H.M. Cox, J.V. Dilorenzo, and W.O. Schlosser, "Control of gate-drain avalanche In GaAs MESFETs,"IEEE Transactions on Electron Devices, Vol. ED-27, 1980, pp. 1013-1018.