Large-signal modeling of microwave gallium nitride-based HFETS

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 1, Issue , 2001, Pages 248-251

  Drozdovski, N V ^a   Caverly, R H ^a   Quinn, M J ^a  

^a VILLANOVA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVE CIRCUITS; MICROWAVE DEVICES; POWER CONTROL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ALUMINUM GALLIUM NITRIDE HETEROSTRUCTURE; GALLIUM NITRIDE HETEROSTRUCTURE; HETEROJUNCTION FIELD EFFECT TRANSISTORS; LARGE SIGNAL MODELS; MICROWAVE GALLIUM NITRIDE TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0035729040     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. GaN based transistor for high power applications
2. Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control
3. Modeling and design of GaAs MESFET control devices for broad-band applications
4. GaN based high electron mobility transistors for microwave and RF control applications