Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 237-242

  Polyakov, A Y ^a   Shin, M ^a   Skowronski, M ^a   Greve, D W ^a   Wilson, R G ^b   Govorkov, A V ^c   Desrosiers, R M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Hughes Aircraft Co   (United States)

^c INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

BN; GaBN; GaN; Organometallic vapor phase epitaxy (OMVPE); Sapphire substrates

Indexed keywords

EID: 0001839357     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0157-x     Document Type: Article

References (20)

1. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
3. R.F. Davis, J. Vac. Sci. Technol. A 11, 829 (1992).
4. S. Sakai, Y. Ueta and Y. Terauchi, Jpn. J. Appl. Phys. 32, Pt. 1, 4413 (1993).
5. J.H. Edgar, Properties of Group III Nitrides, ed. J.H. Edgar (London: INSPEC Publications, 1994), p. 7.
6. V.L. Solozhenko, ibid., p. 43.
7. M. Haruyama, T. Shirai, H. Kawanishi and Y. Suematsu, Proc. Int. Symp. on Blue Lasers and Light Emitting Diodes, (Japan: Chiba Univ., 1996), p. 106.
8. A.J. Noreika and M.H. Francombe, J. Vac. Sci. Technol. B 2, 722 (1969).
9. K.S. Mazdiyasni, R. Ruh and E.E. Hermes, Ceramic Bulletin, 64, 1149 (1985).
10. K. Nakamura, J. Electrochem. Soc. 133, 1120 (1986).
11. H.M. Manasevit, W.B. Hewitt, A.J. Nelson and A.R. Mason, J. Electrochem. Soc. 136, 3070 (1989).
12. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolneck, B.P. Keller, S.P. DenBaars and J.S. Speck, Appl. Phys. Lett. 68, 643 (1996).
13. J.A. Miragliotta, Optical Functions of GaN in Properties of Group III Nitrides, ed. J.H. Edgar (London: INSPEC Publications, 1994), p. 190.
14. R.G. Wilson, F.A. Stevie and C.W. Magee, Secondary Ion Mass Spectrometry (New York: Wiley, 1989).
15. R.M. Desrosiers, D.W. Greve and A.J. Gellman, submitted to Surf. Sci. and references therein.
16. I. Akasaki and H. Amano, Properties of Group III Nitrides, ed. J.H. Edgar (London: INSPEC Publications, 1994), p. 30.
17. T. Akashi, H.-R. Pak and A.B. Sawaoka, J. Mater. Sci. 21, 4060 (1986).
18. A. Onodera, K. Inoue, H. Yoshihara, H. Nakae, T. Matsuda and T. Hirai, J. Mater. Sci. 25, 4279 (1990).
19. M. Ueno, K. Hasegawa, R. Oshima, A. Onodera, O. Shimomura, K. Takemura, H. Nakae, T. Matsuda and T. Hirai, Phys. Rev. B 18, 10226 (1992).
20. W.R.L. Lambrecht and B. Segall, Properties of Group III Nitrides, ed. J.H. Edgar (London: INSPEC Publications, 1994), p. 129.