Refractive index measurements of ZnSe-based ternary epitaxial layers grown by molecular-beam epitaxy on GaAs (100)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1214-1217

  Peiris, F C ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644451717     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590725     Document Type: Article

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