Growth of carbon doping Ga0.47in0.53As using CBr4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1185-1189

  Kuo, H C ^a  

^a United States of America   (United States)

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EID: 22644450365     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

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