Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1098-1100

  Murata, Kazuya ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644449589     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590702     Document Type: Article

References (4)

1. J.-H. Zhou, K. Ikuta, T. Yasuda, T. Umeda, S. Yamasaki, and K. Tanaka, J. Non-Cryst. Solids 227-230, 857 (1998).
2. R. Nozawa, H. Takeda, M. Ito, M. Hori, and T. Goto, J. Appl. Phys. 81, 8035 (1997).
3. R. Nozawa, K. Murata, M. Ito, M. Hori, and T. Goto, J. Vac. Sci. Technol. A (to be published).
4. S. Bae, A. K. Kalkan, S. Cheng, and S. J. Fonash, J. Vac. Sci. Technol. A 16, 1912 (1998).