Effect of CHF3 addition on reactive ion etching of aluminum using inductively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 2971-2975

  Saito, Shuichi ^a,b   Sugita, Kazuyuki ^a   Tonotani, Junichi ^b  

^a CHIBA UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Aluminum; Anisotropic; Etching; Pattern profile; Plasma

Indexed keywords

ALUMINUM; ANISOTROPY; CAPACITANCE; ELECTRON BEAMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; IONIZATION; OXIDATION; PASSIVATION; POLYMERIZATION; REACTIVE ION ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

ANISOTROPIC; MINIATURIZATION; PATTERN PROFILE; POLYMER FILMS;

ORGANIC COMPOUNDS;

EID: 22544484477     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2971     Document Type: Article

References (9)

1. J. M. Lane, K. H. A. Bogart, F. P. Klemens and J. T. C. Lee: J. Vac. Sci. & Technol. A 18 (2000) 2067.
2. P. Czuprynski, O. Joubert, L. Valuer, M. Puttock and M. Heitzmann: J. Vac. Sci. & Technol. B 16 (1998) 147.
3. M. Tanaka, H. Arai, T. Suehiro, N. Wada and T. Tani: Sumitomo Search (Japan) 47 (1991) 40.
4. L. R. Allen and R. Rickard: J. Vac. Sci. & Technol. A 12 (1994) 1265.
5. N. Selamoglu, C. N. Bredbenner, T. A. Giniecki and H. J. Stocker: J. Vac. Sci. & Technol. B 9 (1991) 2530.
6. K. Dang: Proc. 11th Int. Symp. Plasma Processing, 1996, p. 296.
7. C. D. Wagner and W. M. Riggs: Handbook of X-Ray Photoelectron Spectroscopy, (Perkin-Elmer Corporation, 1979).
8. S. Saito, K. Sugita, J. Tonotani and M. Yanage: Jpn. J. Appl. Phys. 41 (2002) 2220.
9. S. Saito, K. Sugita, T. Shinmura and M. Muto: 197th Meeting Electrochem. Soc., 2000, p. 283.