Formation of ammonium salts and their effects on controlling pattern geometry in the reactive ion etching process for fabricating aluminum wiring and polysilicon gate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 2220-2224

  Saito, Shuichi ^a,b   Sugita, Kazuyuki ^a   Tonotani, Junichi ^a   Yamage, Masashi ^a  

^a CHIBA UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Aluminum wiring; Ammonium salt; Anisotropic; Pattern profile; Polysilicon gate; Reactive ion etching; Sidewall passivation

Indexed keywords

ALUMINUM; AMMONIUM COMPOUNDS; ANISOTROPY; CHEMICAL BONDS; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; PASSIVATION; POLYSILICON; SALTS; STRUCTURE (COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM WIRING; CONTROLLING PATTERN GEOMETRY; POLYSILICON GATE; SIDEWALL PASSIVATION;

REACTIVE ION ETCHING;

EID: 0036529238     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2220     Document Type: Article

References (12)