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Volumn 26, Issue 6, 2005, Pages 1182-1186
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Fabrication of a porous silicon new substrate for a high Q radio frequency integrated inductor
a a a a |
Author keywords
Integrated inductor; Porous silicon; Quality factor; Radio frequency integrated circuit
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Indexed keywords
CURRENT DENSITY;
INTEGRATED CIRCUITS;
PORE SIZE;
SUBSTRATES;
THICK FILMS;
FILM THICKNESS;
GROWTH VELOCITY;
INTEGRATED INDUCTOR;
OXIDATION TIME;
QUALITY FACTOR;
RADIO FREQUENCY INTEGRATED CIRCUITS;
POROUS SILICON;
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EID: 22344446118
PISSN: 02534177
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (2)
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References (9)
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