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Volumn 26, Issue 6, 2005, Pages 1182-1186

Fabrication of a porous silicon new substrate for a high Q radio frequency integrated inductor

Author keywords

Integrated inductor; Porous silicon; Quality factor; Radio frequency integrated circuit

Indexed keywords

CURRENT DENSITY; INTEGRATED CIRCUITS; PORE SIZE; SUBSTRATES; THICK FILMS;

EID: 22344446118     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (9)
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.