Characterization of BJT-based particle detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 535, Issue 1-2, 2004, Pages 433-437

  Piemonte, C ^a   Batignani, G ^b   Bettarini, S ^b   Bondioli, M ^b   Boscardin, M ^a   Bosisio, L ^c   Dalla Betta, G F ^d   Dittongo, S ^c   Forti, F ^b   Giorgi, M ^b   Gregori, P ^b   Rachevskaia, I ^c   Ronchin, S ^a   Zorzi, N ^a  

^a ITC IRST   (Italy)

^b UNIVERSITY OF PISA   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d UNIVERSITY OF TRENTO   (Italy)

Author keywords

Bipolar transistors; Device simulation; Solid state detectors

Indexed keywords

BIPOLAR TRANSISTORS; CADMIUM; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC VARIABLES MEASUREMENT; ISOTOPES; PHOTONS; SECONDARY ION MASS SPECTROMETRY; SILICON; SOLID STATE DEVICES;

DEVICE SIMULATION; SHEET RESISTANCE MEASUREMENTS; SOLID STATE DETECTORS; SPREADING RESISTANCE;

PARTICLE DETECTORS;

EID: 9544229708     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(04)01707-3     Document Type: Conference Paper

References (7)

1. R. Horisberger, Nucl. Instr. and Meth. A 288 (1990) 87.
2. G.F. Dalla Betta, et al., IEEE Trans. Nucl. Sci. NS-49 (3) (2002) 1022.
3. G. Batignani, et al., Nucl. Instr. and Meth. A, 2004, in press.
4. M. Grasserbauer, H.W. Werner, Analysis of Microelectronic Materials and Devices, Wiley, Chichester, 1991.
5. C. Piemonte, ITC-irst Technical Report no. 030602, 2003.
6. ATLAS Reference Manual, SILVACO international.
7. D.J. Roulston, Bipolar Semiconductor Devices, McGraw-Hill, Singapore, 1990.