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Volumn 482-485, Issue PART 2, 2001, Pages 829-835

SiC(1 1 1) growth by C60 decomposition on Si(1 1 1) studied by electron spectroscopies

Author keywords

Carbon; Growth; Low energy electron diffraction (LEED); Silicon; Silicon carbide

Indexed keywords


EID: 22244455464     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00743-9     Document Type: Article
Times cited : (5)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.