|
Volumn 482-485, Issue PART 2, 2001, Pages 829-835
|
SiC(1 1 1) growth by C60 decomposition on Si(1 1 1) studied by electron spectroscopies
a,b c c,d a a a a |
Author keywords
Carbon; Growth; Low energy electron diffraction (LEED); Silicon; Silicon carbide
|
Indexed keywords
|
EID: 22244455464
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)00743-9 Document Type: Article |
Times cited : (5)
|
References (16)
|