Correlation between the 1/f noise parameter and the Andreev conductance in epitaxial NbN/AlN/NbN junctions

IEEE Transactions on Applied Superconductivity

Volumn 15, Issue 2 PART I, 2005, Pages 212-215

  Ishida, Hiroki ^a   Okanoue, Kumi ^a   Kawakami, Akira ^b   Wang, Zhen ^b   Hamasaki, Katsuyoshi ^a  

^a Nagaoka University of Technology   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Epitaxial tunnel junctions; Low frequency noise; Multiple Andreev reflection phenomena; Subharmonic gap structures

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MAGNESIA; MAGNETRON SPUTTERING; NIOBIUM COMPOUNDS; SHOT NOISE; SINGLE CRYSTALS; SPURIOUS SIGNAL NOISE; TUNNEL JUNCTIONS;

EPITAXIAL TUNNEL JUNCTION; LOW FREQUENCY NOISE; MULTIPLE-ANDREEV REFLECTION (MAR) PHENOMENA; SUBHARMONIC GAP STRUCTURES;

SEMICONDUCTOR JUNCTIONS;

EID: 22144437680     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2005.849758     Document Type: Conference Paper

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