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IEEE Transactions on Applied Superconductivity

Volumn 11, Issue 1 I, 2001, Pages 80-83

Low-loss epitaxial NbN/MgO/NbN trilayers for THz applications

(3) Kawakami, Akira a Wang, Zhen a Miki, Shigehito b

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

b KOBE UNIVERSITY (Japan)

Author keywords

Epitaxial; Mg target; NbN MgO NbN; Reactive dc sputtering

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; FABRICATION; MAGNESIA; MULTILAYERS; NIOBIUM COMPOUNDS; RESONANCE; RESONATORS; SPUTTERING; SUBSTRATES; SUPERCONDUCTING TRANSITION TEMPERATURE; TEMPERATURE;

EPITAXIAL TRILAYERS; JOSEPHSON OSCILLATORS; MICROSTRIP RESONATOR; REACTIVE DC SPUTTERING; SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR MIXERS;

JOSEPHSON JUNCTION DEVICES;

EID: 0035268469 PISSN: 10518223 EISSN: None Source Type: Journal
DOI: 10.1109/77.919289 Document Type: Conference Paper

Times cited : (29)

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