1/f noise in high current density NbN/AlN/NbN tunnel junctions

IEEE Transactions on Applied Superconductivity

Volumn 11, Issue 1 I, 2001, Pages 84-87

  Wang, Zhen ^a   Kawakami, Akira ^a   Saito, Atsushi ^b   Hamasaki, Katsuyoshi ^b  

^a M P T   (Japan)

^b NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

High current density; Low frequency noise; Tunnel barrier; Tunnel junction

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; NIOBIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; SURFACE PROPERTIES;

HIGH CURRENT DENSITY; LOW FREQUENCY NOISE; TUNNEL BARRIER; VOLTAGE NOISE POWER SPECTRUM;

TUNNEL JUNCTIONS;

EID: 0035268103     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.919290     Document Type: Conference Paper

References (15)

1. High critical current density NbN/AlN/NbN tunnel junctions fabricated on ambient temperature MgO substrates
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14. Potential of superconductive Josephson tunneling technology for ultrahigh performance memories and processors