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Volumn 175-176, Issue PART 1, 1997, Pages 310-316

Evolution of short- and long-range order during Si incorporation on GaAs(0 0 1) observed by RAS and RHEED during MBE

(6) Daweritz L a Stahrenberg, K b Schutzendube P a Zettler, J T b Richter, W b Ploog, K H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

Gallium arsenide; Kinetics of interface formation; Molecular beam epitaxy; Reflectance anisotropy spectroscopy; Reflection high energy electron diffraction; Si doping; Si on GaAs; Surface reconstruction

Indexed keywords

ANISOTROPY; MOLECULAR BEAM EPITAXY; REAL TIME SYSTEMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031147610 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00854-8 Document Type: Article

Times cited : (8)

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