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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 4, 2005, Pages 763-765

Synthesis of β-Ga2O3 nanowires by an MOCVD approach

(2) Kim, H W a Kim, N H a

a Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATALYST ACTIVITY; GALLIUM COMPOUNDS; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; SYNTHESIS (CHEMICAL); TRANSITION METALS; WIRE;

CARRIER GAS; NANODEVICES; RADIO FREQUENCY; REACTION MIXTURE;

NANOSTRUCTURED MATERIALS;

EID: 22044442179 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2982-6 Document Type: Article

Times cited : (51)

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