GaInAsSb/AlGaAsSb laser diodes for the 2-3 μm range

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5738, Issue , 2005, Pages 120-129

  Rouillard, Y ^a   Angellier, J ^a   Salhi, A ^a   Grech, P ^a   Chevrier, F ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Diode lasers; Epitaxy; Infrared lasers; Quantum efficiency; Quantum wells; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; OPTICAL RESONATORS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CONTINUOUS WAVES (CW); FABRY-PEROT RESONATORS; INFRARED LASERS; WATER VAPOR MOLECULES;

SEMICONDUCTOR LASERS;

EID: 21844450467     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.597118     Document Type: Conference Paper

References (10)

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