Self-aligned 40 nm channel carbon nanotube field-effect transistors with subthreshold swings down to 70mV/decade

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5732, Issue , 2005, Pages 14-18

  Javey, Ali ^a   Farmer, Damon ^a   Gordon, Roy ^a   Dai, Hongjie ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; PALLADIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

ATOMIC LAYER DEPOSITION (ALD); DIELECTRIC GAS INSULATORS; GATE LENGTH SCALING; SINGLE-WALLED CARBON NANOTUBES (SNWT);

FIELD EFFECT TRANSISTORS;

EID: 21844436256     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.584212     Document Type: Conference Paper

References (4)

1. A. Javey, et al., Nature 424, 654-657 (2003).
2. A. Javey et al., Nature Materials 1, 241-246 (2002).
3. A. Javey, et al., Nano Lett., ASAP article.
4. S. Wind, et al., Appl. Phys. Lett., 80, 3817-3819 (2002).