Ge concentration profiles and defect characterization in high Ge content Si/SiGe heterostructure

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 3, Issue , 2004, Pages 2131-2135

  Lu, Jinggang ^a   Zhao, Wenjun ^a   Rozgonyi, George A ^a   Liu, Zhenxian ^b   Wise, Rick ^c  

^a North Carolina State University   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT CHARACTERIZATION; DEFECT REDUCTION; MOBILITY ENHANCEMENT; THREADING DISLOCATIONS (TD);

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; DEFECTS; OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; ULSI CIRCUITS;

HETEROJUNCTIONS;

EID: 21644448570     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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