A 78nm 6F2 DRAM technology for multigigabit densities

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 28-29

  Fishburn, F ^a   Busch, B ^a   Dale, J ^a   Hwang, D ^a   Lane, R ^a   McDaniel, T ^a   Southwick, S ^a   Turi, R ^a   Wang, H ^a   Tran, L ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CLADDING (COATING); COMPOSITE MATERIALS; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ETCHING; MIM DEVICES; OPTIMIZATION; TUNGSTEN;

MIM CAPACITORS; MULTIGIGABIT DENSITIES; PROCESS MARGINS; SPACE PATTERNING;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 4544323686     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. C.J. Radens et al., IEDM 2000, pp. 349-352.
2. T. Takahasi et al., ISSCC 2001, pp. 380-381.
3. L. Tran et al., U.S. Patent 6,410,948, June 2002.